Multilayer image sensor pixel structure for reducing crosstalk

ABSTRACT

An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a Divisional of U.S. patent application Ser.No. 12/430,006, filed on Apr. 24, 2009.

This patent application is related to commonly-owned U.S. patentapplication Ser. No. 12/109,134, filed Apr. 24, 2008, entitledMULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK.

BACKGROUND

Image sensors have become ubiquitous. They are widely used in digitalstill cameras, cellular phones, security cameras, as well as in,medical, automobile, and other applications. The technology used tomanufacture image sensors, and in particular, complementarymetal-oxide-semiconductor (“CMOS”) image sensors (“CIS”), has continuedto advance at great pace. For example, the demands of higher resolutionand lower power consumption have encouraged the further miniaturizationand integration of these image sensors.

FIG. 1 illustrates a conventional front side illuminated CIS pixel 100.The front side of CIS pixel 100 is the side of a P+ substrate 105 uponwhich pixel circuitry 130 is disposed and over a which metal stack 110for redistributing signals is formed. The metal layers (e.g., metallayer M1 and M2) are patterned in such a manner as to create an opticalpassage through which light (indicated by dashed arrows) incident on thefront side of CIS pixel 100 can reach a photosensitive or photodiode(“PD”) region 115. To implement a color CIS, the front side of CIS pixel100 further includes a color filter layer 120 disposed under a microlens125. Microlens 125 aids in focusing the light onto PD region 115.

CIS pixel 100 includes pixel circuitry 130 (indicated by a dashedrectangle) disposed adjacent to PD region 115 within a P doped well.Pixel circuitry 130 provides a variety of functionality for regularoperation of CIS pixel 100. For example, pixel circuitry 130 may includecircuitry to commence acquisition of an image charge within PD region115, to reset the image charge accumulated within PD region 115 to readyCIS pixel 100 for the next image, or to transfer out the image dataacquired by CIS pixel 100.

FIG. 2 illustrates details of a portion of two neighboring CIS pixels100 formed within a P− epitaxial (“epi”) layer 140 disposed over P+substrate 105 and separated by shallow trench isolation regions (STI).When a photo-generated charge carrier is formed shallow within the CISpixel (e.g., a first charge carrier 150), it experiences a strong upwardattractive force (shown by arrows 200) towards PD region 115, due to adepletion region or P-N junction found between the PD and thesurrounding epitaxial layer. When a photo-generated charge carrier isformed deeper within the CIS pixel (e.g., a second charge carrier 155),it initially experiences a weaker upward repulsive force due to thepresence of a dopant gradient at the junction between P− epi layer 140and P+ substrate 105.

Crosstalk is a serious problem in image sensors. There are generallythree components to crosstalk: a) electrical crosstalk, b) opticalcrosstalk, and c) spectral crosstalk. Electrical crosstalk results whencharge carriers generated in one pixel of an image sensor are collectedby a neighboring pixel of the image sensor. Optical crosstalk can becaused by the diffraction and/or scattering of light off of metal linesand at interfaces between the dielectric layers within metal stack 110.Spectral crosstalk results from the finite (nonzero) transmittance ofcolor filter 120 to wavelengths outside its target pass band, such asthe finite transmittance of green and blue wavelengths through a redfilter.

One form of electrical crosstalk is lateral drift of photo-generatedcharge carriers created deep in the semiconductor epitaxial layers(e.g., second charge carrier 155). As these photo-generated chargecarriers rise, they can drift laterally and end up collected in the PDregion of a neighboring pixel. Blooming is another form of electricalcrosstalk characterized by the lateral diffusion of charge carriers whena PD region becomes full or saturated with charge carriers. Blooming ismost commonly experienced in high luminous environments. Photo carriersthat are generated near a saturated PD region 115 will not be collectedand therefore remain free to diffuse laterally into a neighboring pixel.Blooming results in the blurring of edges in still images and streakingin moving images. Both forms of electrical crosstalk are due to chargecarriers generated in one pixel being collected by a neighboring pixel.

SUMMARY

In one embodiment, electrical crosstalk between image sensor pixels isreduced relative to traditional image sensor pixels by disposing acollector layer below the photodiode regions which acts to preventcarriers formed deep within the photodiode regions from being collectedin neighboring photodiode regions. Under proper bias conditions a fieldis established by which photo-generated carriers are swept away fromlocations deep within the photodiode regions and collected by thecollector layer below the photodiode regions in order to prevent theircollection by adjacent photodiodes.

In another embodiment electrical crosstalk between image sensor pixelsis reduced relative to traditional image sensor pixels by disposing abarrier layer at least partially covering a collector layer, the barrierlayer acting to prevent carriers formed deep within the photodioderegions from being collected in neighboring photodiode regions. Undercertain bias conditions a field is established by which photo-generatedcarriers are swept away from locations deep within the photodioderegions and collected by the collector layer below the photodioderegions in order to prevent their collection by adjacent photodiodes.Additionally there is created a field between the barrier layer and thephotodiode region that provides for increased collection within thephotodiode regions of carriers generated moderately deep withinphotodiode regions.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments are described with reference to the followingfigures, wherein like reference numerals refer to like parts throughoutthe various views unless otherwise specified.

FIG. 1 is a cross sectional view of a conventional front sideilluminated CMOS image sensor pixel.

FIG. 2 is a cross sectional view of two neighboring CMOS image sensorpixels illustrating a mechanism for electrical crosstalk.

FIG. 3 is a cross sectional view of two neighboring CMOS image sensorpixels having a structure that reduces electrical crosstalk, inaccordance with an embodiment.

FIG. 4 is a cross sectional view of two neighboring CMOS image sensorpixels having a structure that reduces electrical crosstalk, inaccordance with an embodiment.

FIG. 5 is a cross sectional view of two neighboring image sensor pixelshaving a structure that reduces electrical crosstalk, in accordance withan embodiment.

FIG. 6 is a cross sectional view of two neighboring image sensor pixelshaving a structure that reduces electrical crosstalk, in accordance withan embodiment.

FIG. 7 is a cross sectional view of two neighboring image sensor pixelshaving a structure that reduces electrical crosstalk, in accordance withan embodiment.

FIG. 8 is a functional block diagram illustrating a sensor, inaccordance with an embodiment.

FIG. 9 is a circuit diagram illustrating sample pixel circuitry of twoimage sensor pixels within an image sensor array, in accordance with anembodiment.

FIG. 10 is a block diagram illustrating an imaging system with reducedelectrical crosstalk, in accordance with an embodiment.

DETAILED DESCRIPTION

Embodiments of a pixel, an image sensor, an imaging system, and methodsof fabrication of a pixel, image sensor, and imaging system havingimproved electrical crosstalk characteristics are described herein. Inthe following description numerous specific details are set forth toprovide a thorough understanding of the embodiments. One skilled in therelevant art will recognize, however, that the techniques describedherein can be practiced without one or more of the specific details, orwith other methods, components, materials, etc. In other instances,well-known structures, materials, or operations are not shown ordescribed in detail to avoid obscuring certain aspects. For example,although not illustrated, it should be appreciated that image sensorpixels (reference numbers 300, 400, 500, 600, and 700 in the figures)may include a number of material layers disposed on the front side, suchas those illustrated in FIG. 1 (e.g., pixel circuitry 130, a dielectriclayer, metal stack 110, color filter 120, microlens 125, etc.), as wellas other conventional layers (e.g., antireflective films, etc.) used forfabricating CIS pixels. Furthermore, the illustrated cross sections ofimage sensor pixels illustrated herein do not illustrate the pixelcircuitry associated with each pixel. However, it should be appreciatedthat each pixel may include pixel circuitry (e.g., as shown in FIG. 9)coupled to its collection region for performing a variety of functions,such as commencing image acquisition, resetting accumulated imagecharge, transferring out acquired image data, or otherwise.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment. Thus, the appearances of the phrases “in oneembodiment” or “in an embodiment” in various places throughout thisspecification are not necessarily all referring to the same embodiment.Furthermore, the particular features, structures, or characteristics maybe combined in any suitable manner in one or more embodiments.

Referring again to the figures, FIG. 3 is a cross sectional view of twoneighboring CIS pixels 300A and 300B (collectively pixels 300) having amultilayer structure that reduces electrical crosstalk, in accordancewith an embodiment. The illustrated embodiment of pixels 300 include asubstrate 305, a gradient junction 307, an epitaxial (“epi”) layer 315,collection regions 320, and a biasing circuit 325. Collection regions320 of pixels 300A and 300B are isolated from each other by shallowtrench isolations (“STI”) 360 and dopant wells 330. In the illustratedembodiment, a pinning layer 335 (e.g., P type pinning) overlayscollection regions 320 to passivate their surfaces.

In the embodiment illustrated in FIG. 3, substrate 305 is a siliconsubstrate highly doped with N type dopants (e.g., Arsenic; Phosphorous)while epi layer 315 is a silicon layer lightly doped with P type dopants(e.g., Boron). Collection regions 320 represent photosensitive regions(e.g., photodiode), which are doped with the same conductivity type assubstrate 305. Dopant wells 330 are P wells for isolating adjacentcollection regions 320 and preventing a direct interface between STI 360and collection regions 320. However, it should be appreciated that theconductivity types of all the elements can be swapped such thatsubstrate 305 is P+ doped, epi layer 315 is N− doped, collection regions320 are P+ doped, and dopant wells 330 are N doped.

In one embodiment, electrical crosstalk between image sensor pixels isreduced relative to traditional CIS pixels by disposing a P− epi layerover an N type substrate. N type substrates may include silicon wafersdoped with high concentrations of Arsenic or Phosphorous (also referredto as N+ substrates). Traditional CIS pixels typically use P typeepitaxial layers (e.g., P− epi layer 315) disposed on P+ substrates Whenusing N+ substrates, P type epi layer 315 may be fabricated by growingthe P type epi layer on the N+ substrate. Electric field 340 (indicatedby arrows) formed at the interface between P− epi layer 315 and N+substrate 305 acts as a barrier to photo generated charge carriers(e.g., photo electrons) that are formed in N+ substrate 305. Thisbarrier lowers the probability that a charge carrier formed deep in theCIS pixel structure can diffuse to an adjacent collection region 320.Similarly, this structure reduces blooming. If collection region 320 isfull, uncollected electrons are drawn into N+ substrate 305 by electricfield 340, rather than diffusing down around dopant wells 330 and into aneighboring collection region 320.

The junction between P− epi layer 315 and N+ substrate 305 is notinfinitely abrupt. The N+ substrate is typically heavily doped with Asor P. During the epitaxial growth, which is typically done at hightemperatures (>800 C), N type dopants may diffuse into P− epi layer 315.In addition, thermal processing associated with CIS fabricationincreases the N type dopant diffusion into epi layer 315. As such, thejunction between substrate 305 and epi layer 315 is graded (illustratedas gradient junction 307). Electric field 340, and therefore the fieldbarrier generated to reduce crosstalk and blooming, is dependent on thediffusion gradient profile. The final thickness of epi layer 315 afterdiffusion is thus dependent on the diffusion gradient profile. Becausecollection regions 320 are disposed within epi layer 315, the lightcollection efficiency and the degree of lateral charge carrier diffusionand blooming will vary with the CIS process thermal budget and theepitaxial layer growth process.

During operation, photo-generated charge carriers that are createdshallow within epi layer 315 are collected by the electric fieldgenerated by the depletion region at the P-N junction between collectionregion 320 and epi layer 315. In contrast, photo-generated chargecarriers that are created deep within epi layer 315 have a statisticallyincreased chance of being drawn into substrate 305 by electric field 340where they recombine without contributing to crosstalk. Similarly,photo-generated charge carriers that are created even deeper withinsubstrate 305 are inhibited from diffusing up into a neighboringcollection region 320 by the potential barrier created by field 340.Finally, in one embodiment, substrate 305 can be positively biasedrelative to epi layer 315 and collection regions 320 by biasing circuit325. The presence of the biasing operates to further impedephoto-electrons from crossing the potential barrier of field 340. Itshould be appreciated that in an embodiment where substrate 305 is a P+substrate and epi layer 315 is an N− epi layer, biasing circuit 325would be used to negatively bias substrate 305 relative to epi layer315.

FIG. 4 is a cross sectional view of two neighboring CIS pixels 400A and400B (collectively pixels 400) having a multilayer structure thatreduces electrical crosstalk, in accordance with an embodiment. Pixels400 are similar to pixels 300 with the following exceptions. Pixels 400include an additional buffer layer 410 having the same conductivity typedoping as a substrate 405, but in a lesser concentration. Since the Ntype dopant concentration interface is not infinitely abrupt, a gradientjunction 407 represents a graded dopant profile from N+ substrate 405 toa N− buffer layer 410. In one embodiment, pixels 400 may also includebiasing circuit 425 to bias substrate 405 relative to collection regions420 and an epi layer 415 (e.g., positive for N type substrate andcollection regions or negatively for a P type substrate and collectionregions).

The depletion region formed at the interface of N− buffer layer 410 andP− epi layer 415 generates an electric field 414, which draws deepphoto-electrons into buffer layer 410 where they can recombine. Inaddition, a dopant gradient field 416 is generated at gradient junction407, which also pulls photo-electrons generated in buffer layer 410 intosubstrate 405 or impedes the diffusion of photo-electrons generated insubstrate 405 from migrating into buffer layer 410 and from there intoepi layer 415.

Similar to epi layer 415, buffer layer 410 is an epitaxial layer grownover substrate 405 and serves a dual purpose. First, buffer layer 410traps deep or excess photo-electrons resulting in a reduction incrosstalk and blooming. Second, buffer layer 410 serves as an N typediffusion buffer, preventing the high concentration N type dopants ofsubstrate 405 from diffusing into the P type epi layer 415 duringepitaxial growth cycles and the other high temperature CIS processes.The dopant concentration in buffer layer 410 is significantly lower thansubstrate 405, resulting in significantly less N type dopant diffusioninto the P type epi layer 415. As such, buffer layer 410 can increasethe thermal budget of pixels 400 during fabrication. Buffer layer 410adds process margin to device fabricated on N+ substrates, which easesprocess development and process transfers. In addition, this multilayerstructure is less dependent on a particular wafer vendor's growthconditions, allowing wider sources of starting material.

The lower thickness limit to buffer layer 410 is determined by theamount of dopant diffusion expected from substrate 405. However, theupper limit to the thickness of buffer layer 410 is not limited by thefabrication process. Photo-electrons present in buffer layer 410 willmore easily diffuse to substrate 405 than cross the P-N junction barrierof field 414. Therefore a wide margin can be used in choosing thethickness of buffer layer 410. For example, buffer layer 410 may rangefrom approximately 0.3 μm to 10 μm. The use of additional layers, inconjuction with optional applied bias from biasing circuit 425, tocreate additional barriers to diffusion of photo-generated carriers, maybe further advantageous in reducing electrical crosstalk between imagesensor pixels. The use of such additional layers is described herein inthe following embodiments.

FIG. 5 is a cross sectional view of two neighboring image sensor pixels500A and 500B (collectively pixels 500) having a multilayer structurethat reduces electrical crosstalk, in accordance with an embodiment.Pixels 500 are similar to pixels 400 with the following exceptions.Pixels 500 include a barrier layer 512 disposed between an epi layer 515and buffer layer 510. Barrier layer 512 has the same conductivity typeas epi layer 515 (e.g., P type), but with a greater dopant concentrationthan epi layer 515. In an alternative embodiment, pixels 500 includebarrier layer 512, but lack buffer layer 510. Fabrication of such anembodiment may have less complexity but may also have reducedperformance.

Barrier layer 512 serves at least two purposes. On the photodiode side,barrier layer 512 creates an electric field 513 that drivesphoto-electrons present in epi layer 515 up towards collection regions520. On the substrate side, the depletion region formed at the interfaceof barrier layer 512 and buffer layer 510 creates an electric field 514which draws deep photo-generated carriers into the buffer layer wherethey recombine. Electric field 514 is also a potential barrier thatphoto-generated carriers in buffer layer 510 must overcome to diffuseinto epi layer 515. Accordingly, barrier layer 512 impedes deepphoto-electrons from migrating into neighboring collection region 520while promoting the collection of shallow photo-electrons by drivingthem upwards toward collection region 520 and mitigating lateral drift.The size of the potential barrier formed by electric field 514 isdependent upon the dopant concentrations of buffer layer 510 and barrierlayer 512. Barrier layer 512 may be doped via ion implantation of bufferlayer 510, or grown epitaxially using controlled growth conditions. Inone embodiment, pixels 500 may also include a biasing circuit 525 tobias substrate 505 relative to collection regions 520 and epi layer 515(e.g., positive for N type substrate and N type collection regions ornegatively for a P type substrate and P type collection regions).

FIG. 6 is a cross sectional view of two neighboring image sensor pixels600A and 600B (collectively pixels 600) having a multilayer structurethat reduces electrical crosstalk, in accordance with an embodiment. Theillustrated embodiment of pixels 600 includes a substrate 605, anepitaxial (“epi”) layer 607, a collector layer 610, a barrier layer 612,an epi layer 615, collection regions 620, and a biasing circuit 625. Thecollection regions 620 of each pixel 600 are isolated from each otherwith STI 660 and dopant wells 630. In the illustrated embodiment, apinning layer 635 (e.g., P type pinning) overlays collection regions 620to passivate their surfaces.

Referring still to the embodiment illustrated in FIG. 6, substrate 605is a silicon substrate highly doped with P type dopants (e.g., Boron)while epi layers 607 and 615 are silicon layers lightly doped with Ptype dopants (e.g., Boron). Collector layer 610 is doped with N typedopants. Barrier layer 612 is doped with P type dopants, but with agreater dopant concentration than epi layer 615. Collection regions 620represent photosensitive regions (e.g., photodiodes), which are dopedwith the N-type dopants. Dopant wells 630 are P wells for isolatingadjacent collection regions 620 and preventing a direct interfacebetween STI 660 and collection regions 620. In one embodiment dopantwells 630 optionally extend down to reach barrier layer 612 (illustratedin FIG. 6). By electrically coupling dopant wells 630 to barrier layer612, excess charges that are formed or migrate into dopant wells 630 areelectrostatically carried away from collection regions 620 and drawndown into collector layer 610.

It should be appreciated that the conductivity types of all the elementscan be swapped such that substrate 605 is N+ doped, epi layer 615 is N−doped, collection regions 620 are P doped, dopant wells 630 are N doped,collector layer 610 is P doped, and barrier layer 612 is N doped. Insuch a case any applied bias voltage at biasing circuit 625 would have apolarity opposite that illustrated in FIG. 6.

Barrier layer 612 serves at least two purposes. On the photodiode side,barrier layer 612 creates an electric field 613 that drivesphoto-electrons present in epi layer 615 up towards collection regions620. On the substrate side, the depletion region formed at the interfaceof barrier layer 612 and buried collector layer 610 creates an electricfield 614 that draws deep photo-generated carriers into the buriedcollector layer where they recombine. Electric field 614 is also apotential barrier that photo-generated carriers in collector layer 610must overcome to diffuse into epi layer 615. Accordingly, barrier layer612 impedes deep photo-electrons from migrating into a neighboringcollection region 620 while promoting the collection of shallowphoto-electrons by driving them towards collection region 620 andmitigating their lateral migration. The size of the potential barrier isdependent upon the thickness and dopant concentrations of barrier layer612. Barrier layer 612 may have a thickness of approximately 0.3 μm to10 μm and a doping concentration of approximately 2×10¹⁶ atoms/cm³ to2×10¹⁸ atoms/cm³.

Collector layer 610 may have a thickness of approximately 0.3 μm to 10μm and a dopant concentration of approximately 1×10¹⁶ atoms/cm³ to1×10¹⁸ atoms/cm³. In one embodiment, the doping concentration ofcollector layer 610 is less than the doping concentration of barrierlayer 612. Of course, pixels 600 may also include a biasing circuit 625to bias collector layer 610 relative to epi layer 615 (e.g., positivefor N type collection regions or negatively for P type collectionregions).

During operation of image sensor pixel 600, photo-generated chargecarriers that are created shallow within epi layer 615 are collected byelectric field 618 generated by the depletion region at a P-N junctionformed between collection region 620 and epi layer 615. In contrast,photo-generated charge carriers that are created deep within epi layer615 may either be driven up towards collection regions 620 by electricfield 613 or be drawn into collector layer 610 by electric field 614where they recombine without contributing to crosstalk. Also, whencollection regions 620 have reached their maximum capacity, anyadditional carriers may overcome electric field 613 and be drawn byelectric field 614 into collector layer 610 without contributing toblooming. Similarly, photo-generated charge carriers that are createdeven deeper within collector layer 610, epi layer 607, and substrate 605are inhibited from diffusing up into a neighboring collection region 620by the potential barrier created by electric field 614. Finally, in oneembodiment, collector layer 610 can be positively biased relative to epilayer 615 and collection regions 620 by biasing circuit 625. Thepresence of the biasing operates to further impede photo-electrons fromcrossing the potential barrier of field 614. Epi layers 607 and 615, andsubstrate 605 may typically be electrically grounded but depending onthe application other structures may be grounded as well. It should beappreciated that in an embodiment where collector layer 610 is P+ dopedand epi layer 615 is an N− epi layer, the biasing circuit 625 wouldnegatively bias substrate 610 relative to epi layer 615.

FIG. 7 is a cross sectional view of two neighboring image sensor pixels700A and 700B (collectively pixels 700) having a multilayer structurethat further reduces electrical crosstalk, in accordance with anembodiment. Pixels 700 are similar to pixels 600 with the followingexceptions. Collector layer 710 is formed by ion implantation ofselected regions of epi layer 707, resulting in the creation ofelectrical pass-through 702 between barrier layer 712 and epi layer 707at selected locations. Electrical pass-through 702 is an area of epilayer 707 that is not selected to become collector 710 by ionimplantation. Electrical pass-through 702 allows for more efficientdraining of electrical carriers from epi layer 707 into barrier layer712. In an embodiment where barrier layer 712 is doped P type, photongenerated holes may be improperly drained from barrier layer 712 withoutthe presence of electrical pass-through 702. Electrical pass-through 702may be maintained along barrier layer 712 in a specific pattern (e.g.under pixels having one or more specific color filters) or they could beplaced less frequently and/or randomly within the array. Other designparameters for electrical pass-through 702 such as density and sizedepend, for example, on the barrier layer resistance, the number ofneighboring pixels within a pixel array, and the size of each collectionregion 720.

FIG. 8 is a functional block diagram illustrating a CIS 800, inaccordance with an embodiment. The illustrated embodiment of CIS 800includes pixel array 805 having improved electrical crosstalkcharacteristics, readout circuitry 810, function logic 815, and controlcircuitry 820.

Pixel array 805 is a two-dimensional (“2D”) array of image sensor pixels(e.g., pixels P1, P2 . . . , Pn). In one embodiment, each pixelrepresents any of pixels 300, 400, 500, 600 or 700, illustrated in FIGS.3-7. In one embodiment, each pixel is a CIS pixel. In one embodiment,pixel array 805 includes a color filter array including a color pattern(e.g., Bayer pattern or mosaic) of red, green, and blue filters. Asillustrated, each pixel is arranged into a row (e.g., rows R1 to Ry) anda column (e.g., column C1 to Cx) to acquire image data of a person,place, or object, which can then be used to render a 2D image of theperson, place, or object.

After each pixel has acquired its image data or image charge, the imagedata is readout by readout circuitry 810 and transferred to functionlogic 815. Readout circuitry 810 may include amplification circuitry,analog-to-digital (“ADC”) conversion circuitry, or otherwise. Functionlogic 815 may simply store the image data or even manipulate the imagedata by applying post image effects (e.g., crop, rotate, remove red eye,adjust brightness, adjust contrast, or otherwise). In one embodiment,readout circuitry 810 may readout a row of image data at a time alongreadout column lines (illustrated) or may readout the image data using avariety of other techniques (not illustrated), such as a column/rowreadout, a serial readout, or a full parallel readout of all pixelssimultaneously.

Control circuitry 820 is connected with pixel array 805 to controloperational characteristic of pixel array 805. For example, controlcircuitry 820 may generate a shutter signal for controlling imageacquisition. In one embodiment, the shutter signal is a global shuttersignal for simultaneously enabling all pixels within pixel array 805 tosimultaneously capture their respective image data during a singleacquisition window. In an alternative embodiment, the shutter signal isa rolling shutter signal whereby each row, column, or group of pixels issequentially enabled during consecutive acquisition windows.

FIG. 9 is a circuit diagram illustrating pixel circuitry 900 of twofour-transistor (“4T”) pixels within a pixel array, in accordance withan embodiment. Pixel circuitry 900 is one possible pixel circuitryarchitecture for implementing each pixel within pixel array 805 of FIG.8. However, it should be appreciated that the embodiments describedherein are not limited to 4T pixel architectures; rather, one ofordinary skill in the art having the benefit of the instant disclosurewill understand that the present teachings are also applicable to 3Tdesigns, 5T designs, and various other pixel architectures.

In FIG. 9, pixels Pa and Pb are arranged in two rows and one column. Theillustrated embodiment of each pixel circuitry 900 includes a photodiodePD, a transfer transistor T1, a reset transistor T2, a source-follower(“SF”) transistor T3, and a select transistor T4. During operation,transfer transistor T1 receives a transfer signal TX, which transfersthe charge accumulated in photodiode PD to a floating diffusion node FD.In one embodiment, floating diffusion node FD may be coupled to astorage capacitor for temporarily storing image charges.

Reset transistor T2 is coupled between a power rail VDD and the floatingdiffusion node FD to reset the pixel (e.g., discharge or charge the FDand the PD to a preset voltage) under control of a reset signal RST. Thefloating diffusion node FD is coupled to control the gate of SFtransistor T3. SF transistor T3 is coupled between the power rail VDDand select transistor T4. SF transistor T3 operates as a source-followerproviding a high impedance connection to the floating diffusion FD.Finally, select transistor T4 selectively couples the output of pixelcircuitry 900 to the readout column line under control of a selectsignal SEL.

In one embodiment, the TX signal, the RST signal, and the SEL signal aregenerated by control circuitry 820. In an embodiment where pixel array805 operates with a global shutter, the global shutter signal is coupledto the gate of each transfer transistor T1 in the entire pixel array 805to simultaneously commence charge transfer from each pixel's photodiodePD. Alternatively, rolling shutter signals may be applied to groups oftransfer transistors T1.

FIG. 10 illustrates an imaging system 1000 that utilizes a CMOS imagesensor 1100 having image sensor pixel structures providing reducedelectrical crosstalk, according to any of the embodiments disclosedherein. Image system 1000 further includes imaging optics 1200 fordirecting light from an object to be imaged onto CMOS image sensor 1100,and may also include a signal processor 1300 for producing processedimage data for display on optional display 1400.

The above description of illustrated embodiments, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments to the precise forms disclosed. While specificembodiments are described herein for illustrative purposes, variousmodifications are possible within the scope, as those skilled in therelevant art will recognize. These modifications can be made in light ofthe above detailed description. Examples of some such modificationsinclude dopant concentration, layer thicknesses, and the like. Further,although the embodiments illustrated herein refer to CMOS sensors usingfrontside illumination, it will be appreciated that they may also beapplicable to CMOS sensors using backside illumination.

The terms used in the following claims should not be construed to limitthe disclosure to the specific embodiments disclosed in thespecification. Rather, the scope is to be determined entirely by thefollowing claims, which are to be construed in accordance withestablished doctrines of claim interpretation.

1. A method of operating an image sensor, comprising: collecting chargecarriers within collection regions disposed within a first P typeepitaxial layer in response to light incident on the image sensor;generating a first field at a junction between an N type collector layerand a P type barrier layer to draw excess charge carriers generatedwithin the P type barrier layer away from the collection regions intothe N type collector layer, wherein the N type collector layer and the Ptype barrier layer are disposed between a substrate layer and the firstP type epitaxial layer, wherein a second P type epitaxial layer isdisposed between the substrate layer and the N type collector layer;generating a second field at a junction between the P type barrier layerand the first P type epitaxial layer to push photo-electrons generatedwithin the first P type epitaxial layer towards the collection regions;and electrically coupling the second P type epitaxial layer to the Ptype barrier layer via electrical pass-throughs selectively disposedthrough the N type collector layer.
 2. The method of claim 1, whereinthe image sensor comprises a complementary metal-oxide-semiconductor(“CMOS”) image sensor.
 3. The method of claim 1, wherein the P typebarrier layer is electrically coupled to P wells separating adjacentcollection regions, the method further comprising: electrostaticallydrawing excess charge carriers within the P wells down through thebarrier layer towards the collector layer.
 4. The method of claim 1,wherein the P type barrier layer has a higher concentration of P typedopants than the first P type epitaxial layer, wherein the second fieldcomprises a P type dopant concentration gradient, and wherein the firstfield comprises an electrostatic field due to a depletion region.
 5. Themethod of claim 1, further comprising positively biasing the N typecollector layer relative to the P type barrier layer.
 6. The method ofclaim 1, wherein the substrate layer comprise a P type substrate.
 7. Themethod of claim 1, wherein the N type collector layer has a dopantconcentration of approximately 10¹⁶ atoms/cm³ to 10¹⁷ atoms/cm³.
 8. Themethod of claim 1, wherein the N type collector layer is about 0.3 μm to10 μm thick.
 9. The method of claim 1, wherein the P type barrier layerhas a dopant concentration of approximately 10¹⁷ atoms/cm³ to 10¹⁸atom/cm³.
 10. The method of claim 1, wherein the P type barrier layerhas a thickness of approximately 0.3 um to 1.0 um.
 11. A method ofoperating an image sensor, comprising: collecting charge carriers withincollection regions disposed within a first N type epitaxial layer inresponse to light incident on the image sensor; generating a first fieldat a junction between an P type collector layer and a N type barrierlayer to draw excess charge carriers generated within the N type barrierlayer away from the collection regions into the P type collector layer,wherein the P type collector layer and the N type barrier layer aredisposed between a substrate layer and the first N type epitaxial layer,wherein a second N type epitaxial layer is disposed between thesubstrate layer and the P type collector layer; generating a secondfield at a junction between the N type barrier layer and the first Ntype epitaxial layer to push photo-generated charge carriers generatedwithin the first N type epitaxial layer towards the collection regions;and electrically coupling the second N type epitaxial layer to the Ntype barrier layer via electrical pass-throughs selectively disposedthrough the P type collector layer.